?2008 fairchild semiconductor corporation fca47n60 fca47n60_f109 rev.c0 fca47n60 / fca47n60_f109 n-channel mosfet march 2013 www.fairchildsemi.com 1 fca47n60 / fca47n60_f109 n-channel superfet ? mosfet 600 v, 47 a, 70 m features ? 650 v @ t j = 150c ?typ. r ds(on) = 58 m ? ultra low gate charge (typ. q g = 210 nc) ? low effective output capacitance (typ. c oss .eff = 420 pf) ? 100% avalanche tested description superfet ? mosfet is fairchild semiconductor ? ?s first gener - ation of high voltage super-junction (sj ) mosfet family that is utilizing charge balance te chnology for outstanding low on- resistance and lower gate charge performance. this technology is tailored to minimize conducti on loss, provide superior switch - ing performance, dv/dt rate and higher avalanche energy. con - sequently, superfet mosfet is ve ry suit able for the switching power applications such as pfc, server/telecom power, fpd tv power, atx power and industrial power applications. d g s g s d to-3pn absolute maximum ratings symbol parameter fca47n60 fca47n60_f109 unit v dss drain-source voltage 600 v i d drain current - continuous (t c = 25 c) - continuous (t c = 100 c) 47 29.7 a a i dm drain current - pulsed (note 1) 141 a v gss gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 1800 mj i ar avalanche current (note 1) 47 a e ar repetitive avalanche energy (note 1) 41.7 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t c = 25 c) - derate above 25 c 417 3.33 w w/ c t j, t stg operating and storage temperature range -55 to +150 c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 c thermal characteristics symbol parameter typ. max. unit r jc thermal resistance, junction-to-case -- 0.3 c/w r cs thermal resistance, case-to-sink 0.24 -- r ja thermal resistance, junction-to-ambient -- 41.7 c/w
fca47n60 / fca47n60_f109 n-channel mosfet ?2008 fairchild semiconductor corporation fca47n60 fca47n60_f109 rev.c0 www.fairchildsemi.com 2 package marking and ordering information device marking device package reel size tape width quantity fca47n60 fca47n60 to-3p - - 30 fca47n60 fca47n60_f109 to-3pn - - 30 electrical characteristics t c = 25c unless otherwise noted symbol parameter conditions min typ max unit off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 a, t j = 25 c 600 -- -- v v gs = 0 v, i d = 250 a, t j = 150 c -- 650 -- v bv dss / t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 c -- 0.6 -- v/ c bv ds drain-source avalanche breakdown voltage v gs = 0 v, i d = 47 a -- 700 -- v i dss zero gate voltage drain current v ds = 600 v, v gs = 0 v v ds = 480 v, t c = 125 c -- -- -- -- 1 10 a a i gssf gate-body leakage current, forward v gs = 30 v, v ds = 0 v -- -- 100 na i gssr gate-body leakage current, reverse v gs = -30 v, v ds = 0 v -- -- -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3.0 -- 5.0 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 23.5 a -- 0.058 0.07 g fs forward transconductance v ds = 40 v, i d = 23.5 a (note 4) -- 40 -- s dynamic characteristics c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1.0 mhz -- 5900 8000 pf c oss output capacitance -- 3200 4200 pf c rss reverse transfer capacitance -- 250 -- pf c oss output capacitance v ds = 480 v, v gs = 0 v, f = 1.0 mhz -- 160 -- pf c oss eff. effective output capacitance v ds = 0 v to 400 v, v gs = 0 v -- 420 -- pf switching characteristics t d(on) turn-on delay time v dd = 300 v, i d = 47 a r g = 25 (note 4, 5) -- 185 430 ns t r turn-on rise time -- 210 450 ns t d(off) turn-off delay time -- 520 1100 ns t f turn-off fall time -- 75 160 ns q g total gate charge v ds = 480 v, i d = 47 a v gs = 10 v (note 4, 5) -- 210 270 nc q gs gate-source charge -- 38 -- nc q gd gate-drain charge -- 110 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 47 a i sm maximum pulsed drain-source diode forward current -- -- 141 a v sd drain-source diode forward voltage v gs = 0 v, i s = 47 a -- -- 1.4 v t rr reverse recovery time v gs = 0 v, i s = 47 a di f /dt =100 a/ s (note 4) -- 590 -- ns q rr reverse recovery charge -- 25 -- c notes: 1. repetitive rating: pulse width limit e d by maximum junction temperature 2. i as = 18 a, v dd = 50 v, r g = 25 , starting t j = 25 c 3. i sd 47 a, di/dt 200 a/ s, v dd bv dss , starting t j = 25 c 4. pulse test: pulse width 30 0 s, duty cycle 2% 5. essentially independent of operating temperature typical characteristics
fca47n60 / fca47n60_f109 n-channel mosfet ?2008 fairchild semiconductor corporation fca47n60 fca47n60_f109 rev.c0 www.fairchildsemi.com 3 typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics 10 -1 10 0 10 1 10 0 10 1 10 2 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v bottom : 5.5 v notes : 1. 250 s pulse test 2. t c = 25 i d , drain current [a] v ds , drain-source voltage [v] 24681 0 10 0 10 1 10 2 note 1. v ds = 40v 2. 250 s pulse test -55 150 25 i d , drain current [a] v gs , gate-source voltage [v] figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate voltage v ariati on vs. s ource current and temperatue 0 20 40 60 80 100 120 140 160 180 200 0.00 0.05 0.10 0.15 0.20 v gs = 20v v gs = 10v note : t j = 25 r ds(on) [ ? ],drain-source on-resistance i d , drain current [a] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 10 0 10 1 10 2 25 150 notes : 1. v gs = 0v 2. 250 s pulse test i dr , reverse drain current [a] v sd , source-drain voltage [v] figure 5. capacitance characteristics figure 6. gate charge characteristics 10 -1 10 0 10 1 0 5000 10000 15000 20000 25000 30000 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd notes : 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] v ds , drain-source voltage [v] 0 50 100 150 200 250 0 2 4 6 8 10 12 v ds = 250v v ds = 100v v ds = 400v note : i d = 47a v gs , gate-source voltage [v] q g , total gate charge [nc]
fca47n60 / fca47n60_f109 n-channel mosfet ?2008 fairchild semiconductor corporation fca47n60 fca47n60_f109 rev.c0 www.fairchildsemi.com 4 typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. on-resistance variation vs. temperature vs. temperature -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 notes : 1. v gs = 0 v 2. i d = 250 a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 notes : 1. v gs = 10 v 2. i d = 47 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] figure 9. safe operating area figure 10. maximum drain current vs. case temperature 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 operation in this area is limited by r ds(on) dc 10 ms 1 ms 100 us notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] 25 50 75 100 125 150 0 10 20 30 40 50 i d , drain current [a] t c , case temperature [ ] figure 10. transient thermal response curve 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 notes : 1. z jc (t) = 0.3 /w max. 2. d uty f actor, d =t 1 /t 2 3. t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , square w ave pulse duration [sec] t 1 p dm t 2
fca47n60 / fca47n60_f109 n-channel mosfet ?2008 fairchild semiconductor corporation fca47n60 fca47n60_f109 rev.c0 www.fairchildsemi.com 5 gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms
fca47n60 / fca47n60_f109 n-channel mosfet ?2008 fairchild semiconductor corporation fca47n60 fca47n60_f109 rev.c0 www.fairchildsemi.com 6 peak diode recovery dv/dt test circuit & waveforms
fca47n60 / fca47n60_f109 n-channel mosfet ?2008 fairchild semiconductor corporation fca47n60 fca47n60_f109 rev.c0 www.fairchildsemi.com 7 mechanical dimensions (continued) to-3p dimensions in millimeters
fca47n60 / fca47n60_f109 n-channel mosfet ?2008 fairchild semiconductor corporation fca47n60 fca47n60_f109 rev.c0 www.fairchildsemi.com 8 mechanical dimensions (continued) to-3pn dimensions in millimeters
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?2008 fairchild semiconductor corporation fca47n60 fca47n60_f109 rev.c0 www.fairchildsemi.com 9 fca47n60 / fca47n60_f109 n-channel mosfet
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